1. Simplified diagram of the LMG5200 GaN FET power stage. The LMG5200 is a complete, reliable power stage, consisting of a performance optimized driver and power GaN FET. All devices are mounted on a ...
IXYS Corporation has introduced half-bridge MOSFET modules that are available in IXYS' proprietary ISOPLUS i4-PAC packaging. The modules provide thermal performance and temperature cycling ...
The BSM120D12P2C005 is a half bridge power module consisting of SiC-DMOSFETs and SiC-SBDs from ROHM. With a drain-source voltage of 1200 V and drain current of 120 A, the device has a maximum total ...
International Rectifier expanded its µIPM family of compact power modules with the IRSM808-105MH and IRSM807-105MH, which are targeted at high-efficiency appliance and light industrial applications ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...
UK-based Dynex Semiconductor has announced the development of a new 450A, 650V GaN half-bridge power module, designed to ...
Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
SemiQ will unveil 1,200V silicon carbide half-bridges packaged in S3 modules at PCIM next month. The industry-standard package is 62mm long and 26.3mm high. So far, only the part numbers and basic ...
The module features the enhanced first-generation M1H chip, integrated NTC temperature sensor, and PressFIT pins. It is available in two variants: - A TIM (Thermal Interface Material) pre-applied ...
MALVERN, Pa., May 27, 2020 (GLOBE NEWSWIRE) -- The Micro-Measurements® brand of Vishay Precision Group, Inc. (NYSE: VPG) (www.micro-measurements.com), today introduced the MRF-Series Bridge Completion ...
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